K4B4G1646Q-HYH9

The K4B4G1646Q-HYH9 is Samsung’s 4 Gb DDR3L SDRAM component (Q-die), organised 256Mx16 with 8 banks in a 96-ball FBGA package. It is one of the three orderable codes that the §1 ordering table of this datasheet prints – one 256Mx16 row across three speed bins.

Key figures

• Density and organisation: the ordering table prints 256Mx16 for this code and §2 prints “The 4Gb DDR3 SDRAM Q-die is organized as a 32Mbit x 16 I/Os x 8banks device”. Our arithmetic: 32 Mbit x 16 I/O = 512 Mb per bank x 8 banks = 4 Gb.
• Speed bin: this code sits in the table column DDR3L-1333 (9-9-9) (CL-tRCD-tRP 9-9-9; §2 Table 2 prints tCK(min) 1.5 ns for that bin, and §2 lists the matching clock as 667MHz).
• Low-voltage supply: §2 prints “JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)”, the cover and every page header print DDR3L SDRAM, and §7.1 Table 6 recommends VDD and VDDQ at 1.35V (1.283 / 1.35 / 1.45 V) and at 1.5V (1.425 / 1.5 / 1.575 V). This is a DDR3L (low-voltage) component, not a 1.5V-only DDR3 part.
• Temperature: the ordering table itself prints no temperature letter; the operating range comes from §6.2 Table 5, which prints a single row – 0 to 95 (deg C) (site term: 0~95°C). All three codes in this table share that one range.
• Package: the ordering table prints 96 FBGA and §2 prints “Package : 96 balls FBGA – x16”.
• Absolute maximum ratings (§6.1): the table prints T Storage Temperature -55 to +100 (deg C).

How the document layers its temperature figures

§6.2 prints one operating row in Table 5 (0 to 95 deg C) and then adds two notes we quote rather than merge: note 2 says the case temperature “must be maintained between 0-85 deg C under all operating conditions”, and note 3 says some applications need the Extended Temperature Range between 85 and 95 deg C, where full specifications still apply but “Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us” (§13.2 Table 46 prints 7.8 us at 0-85 and 3.9 us at 85-95). So the 95 ceiling and the 85 maintenance guidance are two layers of the same table, not two competing ranges; we publish the table row as the component range and leave the notes quoted in place instead of restating them as a single number.

Document status

This datasheet is a released specification, not a preliminary one: its revision history carries a single row printing “1.0 – First SPEC. Release Jul. 2013 – S.H.Kim” and every page footer prints Rev. 1.0. We publish the figures as printed in that document.

Lifecycle status

The Lifecycle row above is left blank: the datasheet is a technical specification and prints no product status. Separately, we have not verified a reachable per-code Samsung product page for this order code, and third-party catalogue or distributor listings are not an acceptable on-page source under this site’s rules. So this page makes no Active or End-of-Life claim; the gap is tracked as N269.

What the temperature range does and does not claim

The 0 to 95 deg C figure above is a temperature range the document assigns to the part; it is not a reliability qualification. The datasheet carries no certification standard, no qualification body and no qualification result anywhere in its 65 pages, so this page publishes only the printed operating range and asserts no grade beyond it.

Provenance

Every figure above is taken from Samsung 4Gb DDR3L Q-die x16 SDRAM component datasheet **Rev. 1.0** (65 pages · md5 3ab1cf5e0d64f1d89c7fff3089af458b · last row of the revision-history table 1.0 – First SPEC. Release Jul. 2013 – S.H.Kim), a channel-local copy. Its PDF /Info carries no aggregator watermark and its revision history is part-number-level, but no byte-identical manufacturer-hosted public copy has been verified, so the manufacturer datasheet button is left unpopulated and we do not host the file.

Who makes it

K4B4G1646Q-HYH9 is a DDR3L SDRAM component of Samsung Electronics Co., Ltd. The other order codes in this datasheet’s single 256Mx16 row differ from it only in speed bin, and each has its own page.