K4UCE3Q4AB-MGCL

K4UCE3Q4AB-MGCL is a 64Gb LPDDR4X QDP mobile SDRAM from Samsung. The datasheet identifies the array on the §2.0 key-feature line as “64Gb QDP = 128Mb x 32DQ x 8banks x 2channels” and on the cover as 128Mb x32DQ x8banks x2channels. The device is rated up to 4266 Mbps at tCK = 0.468 ns on the LVSTLE_06 interface with VDD1/VDD2/VDDQ = 1.8V/1.1V/0.6V, in the package printed on the cover as 200FBGA, 10×15, with case temperature Tc = -25 to +85 °C. Procurement note: the full order code printed on the §3.0 ordering table is K4UCE3Q4AB-MGCL — bills of material, purchase orders and silkscreen should carry that code.

Key figures

• Density and organisation: 64Gb LPDDR4X in a QDP configuration; §2.0 prints “64Gb QDP = 128Mb x 32DQ x 8banks x 2channels” and the cover prints 128Mb x32DQ x8banks x2channels.
• Data rate: up to 4266 Mbps at tCK = 0.468 ns; the §3.0 note states that “4266Mbps is backward compatible to lower frequency.
• Channel structure: the §2.0 feature list prints 2channel composition per die and 8 internal banks for each channel; the ordering table gives the Org column as 2Ch, x16/Ch, and the decode strip gives 3Q = x32 (QDP LPDDR4X) and 4 = 8Bank.
• Supplies and IO: LVSTLE_06 with VDD1/VDD2/VDDQ = 1.8V/1.1V/0.6V.
• Package: 200-ball FBGA, 10 x 15 mm — the decode strip gives M = 200-FBGA.
• Refresh: the §2.0 feature list prints Refresh rate : 3.9us, and the density field of the decode strip gives CE = 64G, 8K/32ms.
• Device generation: the decode strip marks B = 3rd Generation.

Divergence inside this document, published as printed and not resolved on the manufacturer side: the §3.0 ordering table fills the Org column with 2Ch, x16/Ch, while the cover, the §2.0 identity line and the decode strip give the package-level organisation as x32 (QDP LPDDR4X). Both forms are reproduced here and neither is asserted over the other.

Ordering and decoding

§3.0 prints exactly one order code for this document, K4UCE3Q4AB-MGCL. Its decode strip reads: device type LPDDR4X SDRAM, CE = 64G, 8K/32ms, 3Q = x32 (QDP LPDDR4X), 4 = 8Bank, the interface field gives LVSTLE_06 at 1.8V/1.1V/0.6V, M = 200-FBGA and G gives the temperature window quoted below.

Temperature rating

The §3.0 order table prints the rating as Tc = -25 ~ 85 and the decode strip repeats that window. The datasheet carries no reliability qualification standard and no grade certification of any kind, so this page asserts none: the temperature window is published exactly as printed, nothing more.

Lifecycle status

The Lifecycle row above is left blank: this document is a technical specification and states no product-status or end-of-life figure, so we publish none.

Provenance

Every figure above is taken from the Samsung datasheet for K4UCE3Q4AB-MGCL dated Rev. 1.0, Apr. 2022, whose revision history ends at “1.0 – Final datasheet. Apr 20th, 2022 Final J.Y.Bae”. The copy is a channel-held local file and has not been byte-compared with a copy downloaded from the manufacturer, so the manufacturer datasheet button is left unpopulated and no direct PDF link is published.

Who makes it

K4UCE3Q4AB-MGCL is a 64Gb LPDDR4X mobile SDRAM of Samsung Electronics Co., Ltd.