H9HCNNNBKMMLXR-NEI

SK hynix · LPDDR · · -40~95°C

Compiled specifications

Compiled by the MemSignal team from publicly available information
ParameterValue
Part numberH9HCNNNBKMMLXR-NEI
Density / capacity16 Gb (x16, 2 Channel)
Speed / gradeDDR4-4266
Operating temperature-40~95°C
Product lineLPDDR4X mobile DRAM component
Lifecycle—

Blank rows are omitted rather than filled with a guess.

The H9HCNNNBKMMLXR-NEI is a 16 Gb (x16, 2 Channel) SK hynix mobile DRAM component. Its ordering table row prints LPDDR4X, a DDR4-4266 data-rate bin, in a 200Ball FBGA, with an operating temperature range of -40°C ~ +95°C as printed. The table row for this code is the sole basis of every figure on this page; the sibling code in the same table differs only in its rated temperature range and is published on its own page.

Key figures

  • Mode and supply: LPDDR4X, operating voltage column 1.8V/1.1/0.6.
  • Density and organisation: 16 Gb (x16, 2 Channel).
  • Data rate bin as printed: DDR4-4266.
  • Package: 200Ball FBGA, lead- and halogen-free.
  • Operating temperature as printed: -40°C ~ +95°C.
  • Lifecycle: not published on this page — the source document carries no status statement and we do not infer one.

Ordering-code form

The data sheet prints the decoder line for this family with two wildcard positions after the KMMLXR suffix, and its ordering table lists only the codes reproduced above. Where a supplier-quoted code carries an extra trailing position, that position is a packaging form handled at the spot-listing layer, not a different device.

Provenance

Every figure above is taken from the ordering-information table of SK hynix H9HCNNNBKMMLXR mobile LPDDR data sheet Rev. 1.0, Apr. 2020 (Consumer향_H9HCNNNBKMMLXR1.0-LPDDR4X-16Gb_1ynm.pdf · 8,202,466 bytes · md5 50f2a47df4aa621cc4d4c8ed2d1e7231 · manufacturer-restricted document), and from the same table row that prints this part number.

Who makes it

SK hynix started its semiconductor business in February 1983 and is headquartered at Icheon-si, Gyeonggi-do, Korea. It is a memory semiconductor maker supplying DRAM and NAND.

Cross-references & alternatives

No substitution list published for this part

A cross-reference here would change what a customer buys. We publish one only when each row carries a source and a date and has been checked by a named reviewer.

  • Table shape: Alternative · Fit · Differs in · Source · Checked
  • Blocked on: an engineering review step with a named reviewer per row

Official documentation

MemSignal does not host, reproduce or distribute datasheets. Where the manufacturer publishes one, we link to it.

Provenance

  • Source: SK hynix H9HCNNNBKMMLXR mobile LPDDR data sheet Rev. 1.0, Apr. 2020 (Consumer향_H9HCNNNBKMMLXR1.0-LPDDR4X-16Gb_1ynm.pdf · 8,202,466 bytes · md5 50f2a47df4aa621cc4d4c8ed2d1e7231 · manufacturer-restricted document)
  • Checked: 2026-11-06

Cross-reference and substitution advice appear only where each claim carries a source and a date.

Parameters not compiled for this part

  • Supply voltage
  • Typical applications
  • Country of origin

Listed so the gap is visible on the page, not inferred later.

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