Compiled specifications
| Parameter | Value |
|---|---|
| Part number | H26M52103FMR |
| Density / capacity | 16GB |
| Operating temperature | Extended (-25~85°C) |
| Product line | eMMC 5.0 embedded storage component |
| Lifecycle | — |
Blank rows are omitted rather than filled with a guess.
The H26M52103FMR is a 16GB SK hynix embedded storage component built on 16 nm 64Gb NAND with an integrated MMC controller, in a FBGA153 package with a 11.5x13x1.0 mm body. It belongs to the vendor’s eMMC 5.0 generation of the e-NAND line.
Key figures
- Capacity as printed in the device summary: 16GB.
- NAND basis as printed: 16nm 64Gb.
- Interface generation: the data sheet states compliance with version 5.0 of the e-NAND system specification, with full backward compatibility to the earlier MMC 4.5 specification.
- Package as printed: FBGA153.
- Body size as printed: 11.5x13x1.0 mm.
- Operating temperature as printed: -25℃ ~ +85℃; storage without operation is printed as a separate, wider figure and is not a operating rating.
- Voltage as printed: VCC (NAND supply) 2.7 V to 3.6 V.
- Bus performance as printed: the features list states up to 400 Mbyte/s in HS400 mode.
- Lifecycle: not published on this page — the document carries no availability or status statement and we do not infer one.
This is a root part number
The column in the device summary is headed Root Part Number, not a full order code. We publish this page at that root level because that is the granularity the manufacturer’s table prints: codes quoted by suppliers in the trade commonly carry further positions after it (packing form, and grade variants of the same root), and those positions are handled at the spot-listing layer rather than by inventing additional catalogue pages here.
A date inconsistency in the source document
The page footers of this data sheet read Rev 0.5 / Dec. 2013, while its own revision-history table dates revision 0.5 as 20, Dec, 2014 (the same table dates revision 0.0 Preliminary as 03, Sep, 2013). Both are printed above as the document has them; we are not choosing between them, and neither figure is used as a technical parameter.
Provenance
Every figure above is taken from SK hynix 16nm 64Gb e-NAND (eMMC 5.0) component data sheet Rev 0.5 (manufacturer-restricted document), section 1 Device summary and section 2 Features.
Who makes it
SK hynix started its semiconductor business in February 1983 and is headquartered at Icheon-si, Gyeonggi-do, Korea. It is a memory semiconductor maker supplying DRAM and NAND.
Cross-references & alternatives
A cross-reference here would change what a customer buys. We publish one only when each row carries a source and a date and has been checked by a named reviewer.
- Table shape: Alternative · Fit · Differs in · Source · Checked
- Blocked on: an engineering review step with a named reviewer per row
Official documentation
MemSignal does not host, reproduce or distribute datasheets. Where the manufacturer publishes one, we link to it.
Provenance
- Source: SK hynix 16nm 64Gb e-NAND (eMMC 5.0) component data sheet Rev 0.5 (manufacturer-restricted document)
- Checked: 2026-11-06
Cross-reference and substitution advice appear only where each claim carries a source and a date.
Parameters not compiled for this part
- Speed / grade
- Supply voltage
- Typical applications
- Country of origin
Listed so the gap is visible on the page, not inferred later.
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