MT62F512M32D1DS
Micron · LPDDR · FBGA · -40~95°C, Automotive (AEC-Q100)
Compiled specifications
| Parameter | Value |
|---|---|
| Part number | MT62F512M32D1DS |
| Density / capacity | 2GB (16Gb, 512 Meg x 32) |
| Speed / grade | up to 9600 Mb/s per pin (-020) |
| Supply voltage | VDD1 1.80V / VDD2H 1.05V / VDDQ 0.50V (TYP) |
| Operating temperature | automotive: -40C to +95C (IT) / +105C (AT) / +125C (UT) |
| Product line | LPDDR5X SDRAM (x32, automotive) |
| Lifecycle | — |
Blank rows are omitted rather than filled with a guess.
The Micron MT62F512M32D1DS is an automotive-grade LPDDR5X SDRAM: 2GB (16Gb) density organised as 512 Meg x 32 on one die in a 315-ball TFBGA (12.4mm x 15.0mm, seated height 1.1mm max). It supports up to 9600 Mb/s per pin.
Key figures
- Array: 512Mb x 32 (one die), 2GB (16Gb).
- Speed: up to 9600 Mb/s per pin (-020).
- Supplies: VDD1 1.80V, VDD2H 1.05V, VDDQ 0.50V (TYP).
- Package: 315-ball TFBGA, 12.4mm x 15.0mm.
Ordering codes in this family
The 315b x32 Automotive LPDDR5X document lists the base code MT62F512M32D1DS across speed grades -020 (9600 Mb/s), -023 (8533 Mb/s) and -026 (7500 Mb/s), each offered in automotive temperature suffixes IT (-40C to +95C), AT (-40C to +105C) and UT (-40C to +125C), with an optional functional-safety (F) marking — e.g. MT62F512M32D1DS-023 AAT:E. This page represents the family; the full ordering codes share this document and its package.
Lifecycle
No manufacturer EOL / PCN / lifecycle statement was verified against a first-hand source for these ordering codes, so the lifecycle field is left blank rather than asserted.
Provenance
Every figure above is taken from Micron “315b: x32 Automotive LPDDR5X SDRAM” master datasheet (315b_y52q_sdp_auto_lpddr5x.pdf, Rev. H 07/2025; /Info=Antenna House first-hand typesetting chain, AGG=NONE) — cover features (p1) and part-number ordering information (p2). We publish no datasheet hyperlink; this copy is the manufacturer’s login-gated file, and per this library’s rules we do not re-publish the PDF.
Who makes it
Micron is the brand of Micron Technology, Inc., which its own profile states began in 1978 in Boise, Idaho as a four-person semiconductor design company and is a world leader in memory.
Cross-references & alternatives
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- Table shape: Alternative · Fit · Differs in · Source · Checked
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Official documentation
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Provenance
- Source: Micron "315b: x32 Automotive LPDDR5X SDRAM" master datasheet (315b_y52q_sdp_auto_lpddr5x.pdf, Rev. H 07/2025; /Info=Antenna House first-hand typesetting chain, AGG=NONE)
- Checked: 2026-10-20
Cross-reference and substitution advice appear only where each claim carries a source and a date.
Parameters not compiled for this part
- Typical applications
- Country of origin
Listed so the gap is visible on the page, not inferred later.
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