HN8T15DJHQX109

The HN8T15DJHQX109 is a 256GB SK hynix UFS 3.1 embedded storage component: 512Gb x4 of NAND flash with an integrated controller, in a 153-ball JEDEC FBGA package with a 11.5 x 13.0 x 1.2 mm body. Its product line-up row prints capacity, stack, case-temperature range and this part number together, and that single row is the basis of every figure on this page.

Key figures

• Capacity as printed: 256GB.
• NAND stack configuration: 512Gb x4.
• Interface: UFS 3.1, per the data sheet’s own compatibility statement.
• Package as printed: 153-ball JEDEC FBGA.
• Grade marking in the line-up table: AAT.
• Case operating temperature as printed: –40°C to +105°C.
• Body size as printed: 11.5 x 13.0 x 1.2 mm.
• Lifecycle: not published on this page — the document carries no availability or status statement and we do not infer one.

Reading the two grades

The line-up table pairs the suffix letter with a grade and a case-temperature range: Q carries grade AAT at −40°C to +105°C, while the same density in V carries grade AIT at −40°C to +95°C — a 10 °C narrower ceiling. Density and stack are printed once against each pair of rows (a spanning cell), so this page cites that pair cell for capacity 256GB and configuration 512Gb x4. The grade term in the panel above is how we publish that pairing; the qualification standard itself is stated in the source document and is recorded in this batch’s evidence register rather than repeated as prose here.

Provenance

Every figure above is taken from SK hynix UFS 3.1 3D V7 (grade AAT/AIT) data sheet Revision 1.1, 06.2023 (manufacturer-restricted document), section 1.2 Product Line-up and section 1.3 Key Features.

Who makes it

SK hynix started its semiconductor business in February 1983 and is headquartered at Icheon-si, Gyeonggi-do, Korea. It is a memory semiconductor maker supplying DRAM and NAND.