K4B4G0846E-BCNB

K4B4G0846E-BCNB is a Samsung 4Gb E-die DDR3 SDRAM in the 512Mx8 organisation. The manufacturer datasheet (Rev. 1.2, Dec. 2014) lists it in the DDR3-2133 (14-14-14) column of its ordering table, in the 78 FBGA package, with a minimum clock period tCK = 0.938 ns. Procurement note: the ordering table prints this code exactly once, so bills of material and purchase orders should carry K4B4G0846E-BCNB as the orderable code.

Key figures

• Device and organisation: 4Gb E-die DDR3 SDRAM; the ordering table row for this code has the Organization cell “512Mx8”, and the description page gives the device mapping as “128Mbit x 4 I/Os x 8banks” / “64Mbit x 8 I/Os x 8banks”.
• Speed bin: DDR3-2133 (14-14-14) — speed bin quoted in the order of CL-tRCD-tRP; the datasheet gives tCK(min) = 0.938 ns for this bin.
• Supply: JEDEC standard 1.5V ± 0.075V Power Supply, VDDQ at 1.5V ± 0.075V.
• Architecture: 8 Banks; 8-bit pre-fetch; posted CAS and programmable CAS write latency per the key-features list.
• Package: 78 FBGA with lead-free and halogen-free finish (RoHS compliant per the cover).

Ordering and decoding

The ordering table of this document prints K4B4G0846E-BCNB once, in the 512Mx8 row; the speed-bin columns run from DDR3-1600 through DDR3-2133, and an empty cell in the table means that combination is not printed as offered — we do not fill gaps.

Temperature rating

The datasheet section “DRAM Component Operating Temperature Range” prints the row Operating Temperature Range 0 to 95 °C; this device is catalogued here under that published window only. The document carries no reliability qualification standard and no grade certification of any kind, so this page asserts none — the range is published as printed, nothing more. Refresh derating is documented separately in that section.

Lifecycle status

The Lifecycle row above is left blank: this document is a technical specification and states no product-status or end-of-life figure, so we publish none.

Provenance

Every figure above is taken from the Samsung datasheet for the 4Gb E-die DDR3 SDRAM dated Rev. 1.2, Dec. 2014. The copy is a channel-held local file and has not been byte-compared with a copy downloaded from the manufacturer, so the manufacturer datasheet button is left unpopulated and no direct PDF link is published.

Who makes it

K4B4G0846E-BCNB is a 4Gb DDR3 SDRAM of Samsung Electronics Co., Ltd.