K4B4G0846E-BYK0

K4B4G0846E-BYK0 is a Samsung 4Gb E-die DDR3L SDRAM in the 512Mx8 organisation. The manufacturer datasheet (Rev. 1.3, Jun. 2016) lists it in the DDR3L-1600 (11-11-11) column of its ordering table, in the 78 FBGA package, with a minimum clock period tCK = 1.25 ns. Procurement note: the ordering table prints this code exactly once, so bills of material and purchase orders should carry K4B4G0846E-BYK0 as the orderable code.

Key figures

• Device and organisation: 4Gb E-die DDR3L SDRAM; the ordering table row for this code has the Organization cell “512Mx8”, and the description page gives the device mapping as “128Mbit x 4 I/Os x 8banks” / “64Mbit x 8 I/Os x 8banks”.
• Speed bin: DDR3L-1600 (11-11-11) — speed bin quoted in the order of CL-tRCD-tRP; the datasheet gives tCK(min) = 1.25 ns for this bin.
• Supply: JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V), VDDQ at 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V).
• Architecture: 8 Banks; 8-bit pre-fetch; posted CAS and programmable CAS write latency per the key-features list.
• Package: 78 FBGA with lead-free and halogen-free finish (RoHS compliant per the cover).

Ordering and decoding

The datasheet footnote splits the 13th digit of the order code into two options, printed as “Y” : Commercial temp/Normal power and “M” : Industrial temp/Normal power. K4B4G0846E-BYK0 carries the normal (commercial) letter, and its row is printed in the table with the 512Mx8 organisation.

Temperature rating

The datasheet section “DRAM Component Operating Temperature Range” prints the row Normal 0 to 95 °C; this device is catalogued here under that published window only. The document carries no reliability qualification standard and no grade certification of any kind, so this page asserts none — the range is published as printed, nothing more. Refresh derating is documented separately in that section.

Lifecycle status

The Lifecycle row above is left blank: this document is a technical specification and states no product-status or end-of-life figure, so we publish none.

Provenance

Every figure above is taken from the Samsung datasheet for the 4Gb E-die DDR3L SDRAM dated Rev. 1.3, Jun. 2016. The copy is a channel-held local file and has not been byte-compared with a copy downloaded from the manufacturer, so the manufacturer datasheet button is left unpopulated and no direct PDF link is published.

Who makes it

K4B4G0846E-BYK0 is a 4Gb DDR3L SDRAM of Samsung Electronics Co., Ltd.