Compiled specifications
| Parameter | Value |
|---|---|
| Part number | MT41K256M16TW-107 IT |
| Density / capacity | 4Gb (256 Meg x 16) |
| Speed / grade | -107 (DDR3-1866), CL = 13 |
| Supply voltage | VDD = VDDQ = 1.35V |
| Operating temperature | -40°C to +95°C (Industrial) |
| Product line | DDR3L SDRAM (x16) |
| Lifecycle | — |
Blank rows are omitted rather than filled with a guess.
The Micron MT41K256M16TW-107 IT is a 4Gb DDR3L SDRAM x16, configured as 256 Meg x 16 (32 Meg x 16 x 8 banks), on the -107 speed grade (DDR3-1866) at VDD = VDDQ = 1.35V, in the Industrial temperature range of −40°C to +95°C.
Key figures
- Array: 256 Meg x 16, i.e. 32 Meg x 16 x 8 banks.
- Speed: -107 = DDR3-1866, CL = 13, cycle time 1.07ns.
- Supply: VDD = VDDQ = 1.35V.
- Temperature: Industrial, −40°C to +95°C.
- Package: 96-ball FBGA (TFBGA), 8mm x 14mm, die/code Rev. P.
Status
Micron’s DDR3L part catalog lists this ordering code (MT41K256M16TW-107 IT:P) with a Part Status Code of Production.
Lifecycle
No manufacturer EOL / PCN lifecycle statement was verified against a first-hand source for this ordering code, so the lifecycle field is left blank rather than asserted.
Provenance
The identity of this ordering code and its −40°C to +95°C (Industrial) operating range and Production status are taken from the Micron DDR3L part-catalog product page for MT41K256M16TW-107 IT:P (Specifications block, captured 2026-10-20, which prints its range verbatim as “Operating Temp -40C to +95C”); the array organisation, -107 speed/CL, 1.35V and the 96-ball 8mm x 14mm Rev. P package are taken from the same-manufacturer “4Gb: x4, x8, x16 DDR3L SDRAM” main document (4Gb_DDR3L.pdf, Rev. R 09/18). We publish no datasheet hyperlink: the local copy has not been byte-verified against the publicly hosted file, and the document footer carries the “reserves the right to change products or specifications without notice” line. This is the Industrial temperature variant of the sibling commercial-grade MT41K256M16TW-107.
Who makes it
Micron is the brand of Micron Technology, Inc., which its own profile states began in 1978 in Boise, Idaho as a four-person semiconductor design company and is a world leader in memory.
Cross-references & alternatives
A cross-reference here would change what a customer buys. We publish one only when each row carries a source and a date and has been checked by a named reviewer.
- Table shape: Alternative · Fit · Differs in · Source · Checked
- Blocked on: an engineering review step with a named reviewer per row
Official documentation
MemSignal does not host, reproduce or distribute datasheets. Where the manufacturer publishes one, we link to it.
Provenance
- Source: Micron DDR3L part-catalog 产品页(本码 part-detail,Specifications 逐字存证,2026-10-20 现取)+ "4Gb: x4, x8, x16 DDR3L SDRAM" 主文档(doc-code 4Gb_DDR3L.pdf, Rev. R 09/18, 218 页;/Info=Antenna House/AH Formatter=一手排版链,AGG=NONE)
- Checked: 2026-10-20
Cross-reference and substitution advice appear only where each claim carries a source and a date.
Parameters not compiled for this part
- Typical applications
- Country of origin
Listed so the gap is visible on the page, not inferred later.
Related from our desk
- Anthropic IPO Filing Lifts Memory Stocks; Nomura Sees Shortage Lasting to 2028; SK hynix Weighs $12B Special Dividend Oct 27, 2026 · Market Analysis
- SK hynix DDR4 Dies: A Channel Buyer’s Guide to DJR, CJR and Downgraded Chips Oct 26, 2026 · Market Analysis
- YMTC NAND Shipments Seen Up 800% as China Memory Rises; Nvidia Denies RTX 5090 Exit Oct 24, 2026 · Market Analysis