K4A8G165WG-BCWE

Samsung · DRAM · · Commercial (0~85°C)

Compiled specifications

Compiled by the MemSignal team from publicly available information
ParameterValue
Part numberK4A8G165WG-BCWE
Density / capacity8 Gb
Speed / gradeDDR4-3200 (22-22-22)
Supply voltageVDD = VDDQ = 1.2 V (1.14 V–1.26 V)
Operating temperatureCommercial, 0 °C to +85 °C normal (Extended 85 °C–95 °C)
Product lineDDR4 SDRAM
Lifecycle—

Blank rows are omitted rather than filled with a guess.

K4A8G165WG-BCWE is Samsung’s 8Gb G-die DDR4 SDRAM x16 component, organised as a 512Mx16 device in a 96-ball FBGA (96ball FBGA) package and binned at DDR4-3200 with CAS tRCD tRP of 22-22-22. It is a commercial-temperature memory component; bills of material, purchase orders and PCB silkscreen should carry the full order code K4A8G165WG-BCWE.

Key figures

  • Density and organisation: 8Gb, 512Mx16 (the §2.0 key-features text expands the same array as 64Mbit x16 I/Os x 8banks per bank-group, 16 Banks in 4 Bank Groups).
  • Data rate: DDR4-3200, printed in the §1.0 ordering table as DDR4-3200 (22-22-22); the §2.0 Table 2 lists backward-compatible lower bins (DDR4-1600 through DDR4-2933).
  • Supply voltage: JEDEC standard 1.2V, operating range 1.14V~1.26V.
  • Package: 96-ball FBGA (96ball FBGA) for the x16 organisation.

Temperature rating

The §6.0 operating-temperature tables print the device’s rated case range as 0 to 95 °C overall, with Table 7 giving the Commercial rating a Normal maximum of 85 °C and an Extended maximum of 95 °C (the §2.0 key-features note adds that above 85 °C self-refresh needs the Extended-range derating). We therefore publish this as a Commercial-range part (0 °C to +85 °C normal) and do not assert any reliability-grade or certification claim — the datasheet carries no grade-certification statement.

Lifecycle status

The Lifecycle row above is left blank: this datasheet is a technical specification and states no product-status or end-of-life figure, so we publish none.

Provenance

Every figure above is taken from Samsung 8Gb G-die DDR4 SDRAM x16 Datasheet Rev. 1.0, Feb. 2023(78 页 · K4A8G165WG-BCWE · 本地渠道件,PDF /Info 经 iText 重存), a channel-local copy whose PDF /Info names a Samsung memory-division author but whose Producer line shows an iText re-save, so it is not a byte-identical manufacturer-hosted original; no public copy has been byte-verified and the manufacturer datasheet button is left unpopulated.

Who makes it

K4A8G165WG-BCWE is a DDR4 SDRAM of Samsung Electronics Co., Ltd.

Cross-references & alternatives

No substitution list published for this part

A cross-reference here would change what a customer buys. We publish one only when each row carries a source and a date and has been checked by a named reviewer.

  • Table shape: Alternative · Fit · Differs in · Source · Checked
  • Blocked on: an engineering review step with a named reviewer per row

Official documentation

MemSignal does not host, reproduce or distribute datasheets. Where the manufacturer publishes one, we link to it.

Provenance

  • Source: Samsung 8Gb G-die DDR4 SDRAM x16 Datasheet Rev. 1.0, Feb. 2023(78 页 · K4A8G165WG-BCWE · 本地渠道件,PDF /Info 经 iText 重存)
  • Checked: 2026-10-21

Cross-reference and substitution advice appear only where each claim carries a source and a date.

Parameters not compiled for this part

  • Typical applications
  • Country of origin

Listed so the gap is visible on the page, not inferred later.

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