MT53E256M16D1DS-046

The Micron MT53E256M16D1DS-046 is a 4 Gb mobile memory device built on the Z00M LPDDR4/LPDDR4X die: a 256 Meg x 16 array in a single-channel, one-die (D1) package. The data sheet unifies LPDDR4X and LPDDR4 into one product.

Key figures

• Array configuration: 256 Meg x 16.
• Device configuration: 256 Mb x 16, one 16-bit channel, D1 one die in package.
• Total density (Table 2): 256M16 (4Gb/Package).
• Speed grade: -046, 468ps @ RL = 36/40; data rate per pin: 4266 Mb/s at 2133 MHz.
• Supply: VDD1 1.80 V, VDD2 1.10 V, VDDQ 0.60 V.
• Package: 200-ball WFBGA (package code DS), 10mm x 14.5mm footprint.
• Operating temperature range (WT grade): -30 C to +85 C.

Ordering codes on this page

This page is the MT53E256M16D1DS base device at the -046 grade in the WT (wide-temperature) range. The manufacturer part catalog lists the full ordering code MT53E256M16D1DS-046 WT:B with status Contact Sales. Sibling orderings at other cycle times, other densities, or other temperature grades are separate codes and are not implied by this page.

Provenance

Every figure above is taken from Micron “200b: x16/x32 LPDDR4/LPDDR4X SDRAM” (Z00M die, this data sheet covers the non-auto LPDDR4/4X family) Datasheet Rev. G 3/20 EN, 301 pages (the Features cover page, Table 2 Device Configuration, and the Part Number Chart), and cross-checked against the manufacturer’s logged-in LPDDR4 part catalog which prints the ordering code, its WT range “-30C to +85C”, package “WFBGA” and the Contact Sales status. We link no public datasheet because our copy comes from the manufacturer’s login-gated archive and is marked “Micron Confidential and Proprietary”; no lifecycle statement was verified against a manufacturer source, so lifecycle is left blank rather than asserted.

Who makes it

Micron is the brand of Micron Technology, Inc., which its own profile states began in 1978 in Boise, Idaho as a four-person semiconductor design company and is a world leader in memory.