HSEMSES2S2B16G

HIKSEMI · eMMC · · Extended (-25~85°C)

Compiled specifications

Compiled by the MemSignal team from publicly available information
ParameterValue
Part numberHSEMSES2S2B16G
Density / capacity16 GB (3D TLC; Table 1 states 256 Gb × 1, which contradicts the 14,912 MB user area — see body)
Speed / gradeeMMC 5.1, HS400 up to 200 MHz (SDR/DDR, 1/4/8-bit)
Supply voltageVCC 2.7-3.6 V (typ 3.3 V); VCCQ 1.7-1.95 V (typ 1.8 V) or 2.7-3.6 V (typ 3.3 V)
Operating temperature-25°C to +85°C (operating); -40°C to +85°C (storage) per manufacturer datasheet
Product lineConsumer eMMC 5.1
Typical applicationsMobile phone, tablet, smart TV, set-top box, networking appliance (manufacturer's own list)
Lifecycle—

Blank rows are omitted rather than filled with a guess.

What this part is

HSEMSES2S2B16G is the 16 GB member of HIKSEMI’s consumer eMMC 5.1 family: a 3D TLC NAND device with an embedded thin-flash controller in a 153-ball FBGA measuring 11.5 × 13 × 1.0 mm. JEDEC/MMC standard version 5.1 compliant and backward compatible to eMMC v4.5 through v5.1. The manufacturer positions the family for embedded use in mobile phones, tablets, smart TVs, set-top boxes and networking appliances.

One caveat applies to every figure on this page: the document behind it is a Preliminary datasheet whose latest revision row is dated 10 June 2022 and is described only as “Update some parameters”. It is also the only copy we can read — see Source and status below.

Who makes it. HIKSEMI is the storage brand of 杭州海康存储科技有限公司 (Hangzhou HIKStorage Technology Co., Ltd.). The company’s own profile states it was founded in 2017 and builds on the technology base of Hikvision (海康威视) in audio-video, imaging capture and data management, with its timeline putting the engineering team at 2015 and the registered company at 2017. The datasheet behind this page carries that same entity’s copyright line, so brand and document author are one party here.

Capacity map as delivered

Partition and capacity figures from the manufacturer’s Tables 6-9
Item Value (16 GB)
User area capacity 14,912 MB
SEC_COUNT in Extended CSD 0x1D20000
Boot partition 1 / 2 4,096 KB each
Maximum enhanced user area 4,968 MB (0x26D × 0x10 × 0x1 × 512 KB)
Pre-burned capacity (FOB state) 4.85 GB
Reflow tolerance 3 times

MemSignal recomputed rather than transcribed: SEC_COUNT 0x1D20000 is 30,539,776 sectors of 512 bytes, which is exactly 14,912 MB, and the enhanced-area row reproduces the manufacturer’s own formula (MAX_ENH_SIZE_MULT × HC_WP_GRP_SIZE × HC_ERASE_GRP_SIZE × 512 KB) to the megabyte. Pre-burned capacity is the data budget available before SMT.

The NAND build figure does not agree with the rest of the document

Table 1 lists the device as 3D TLC, 256 Gb × 1. That is what the manufacturer’s own product table prints, and it is reproduced above in the parameter list. It does not, however, reconcile with the capacity figures in the same document:

  • 256 Gb is 32 GB of raw NAND, not 16 GB. A 256 Gb × 1 device in this family line-up would be the 32 GB part, which HIKSEMI lists separately as HSEMSDS6S2B32G.
  • SEC_COUNT 0x1D20000 gives 14,912 MB of user area — exactly half of the 29,824 MB the manufacturer prints for its 32 GB eMMC, and consistent with a 16 GB raw budget.
  • A 16 GB raw budget is 128 Gb. No document in this family that we can read states 128 Gb anywhere, so “the die is 128 Gb × 1” is MemSignal’s arithmetic, not a manufacturer statement, and we are not putting it in the parameter table.

Two readings are therefore on the record: the document’s own “256 Gb × 1”, and the value implied by its own sector count. Until the manufacturer corrects one of them, treat the NAND build of this part as unresolved and design against the capacity figures, which are internally consistent.

Interface

  • Bus width 1-bit (default), 4-bit or 8-bit; Single Data Rate and Dual Data Rate supported.
  • Top timing mode HS400, clock 0 to 200 MHz.
  • Protocol JEDEC/MMC standard version 5.1; backward compatible to eMMC v4.5 through v5.1.
  • Package: 153-ball FBGA, 11.5 × 13 × 1.0 mm.
  • Registers as printed by the manufacturer: CID product name SES2S2, product revision 0x10.

Supply and power

VCC (NAND/core) is 2.7 to 3.6 V, typical 3.3 V. VCCQ (controller/IO) accepts either 1.7 to 1.95 V (typical 1.8 V) or 2.7 to 3.6 V (typical 3.3 V) — one I/O rail or the other, not both at once.

Operating current (RMS) from the manufacturer’s Table 11: 16 GB, 25°C, VCC 3.3 V, VCCQ 1.8 V
Operation Icc (mA, max) Iccq (mA, max)
Read 85 110
Write 80 90

Standby draws 10 µA on VCC and 75 µA on VCCQ; in sleep, VCC drops to 0 µA while VCCQ stays at 75 µA (both with an 8-bit bus and no clock, sleep entered by CMD5 with VCC switched off). Maximum RMS current is averaged over a 100 ms window and the manufacturer notes these figures are “not 100% tested”. As with the rest of this document’s tables, the timing mode used for Table 11 is not stated, so these currents cannot be compared mode-for-mode against another part’s current table.

Performance figures

Sequential read up to 310 MB/s and write up to 200 MB/s; random read up to 3,600 IOPS and random write up to 2,500 IOPS, all at HS400. Both tables share one set of test conditions in this document — a GL3227 card reader over USB 3.0 on a FAT32 volume, OS-less host, clean state — and, unlike the manufacturer’s newer 64 GB documents, no CrystalDiskMark version is named. These are component-level vendor figures, not system benchmarks.

Temperature, and what the document does not claim

The manufacturer states an operating temperature range of -25°C to +85°C and a storage temperature range of -40°C to +85°C; the storage range reaches lower on the cold side than the operating range, so -40°C is a handling figure, not a condition this device is specified to run at.

What the document does not contain is as informative as what it does. There is no qualification or certification statement of any kind in it, no grade designation, no endurance figure (P/E cycles or terabytes written), no reliability or RoHS/moisture-sensitive statement, and no lifecycle or end-of-life position. Anyone reading this page for an automotive or industrial design-in should treat those absences as real: this is a consumer-grade datasheet.

Device features listed by the manufacturer

From the same document’s feature overview: original and alternative boot modes; hardware reset signal; data removal commands (erase, trim, sanitize, discard); multiple partitioning; signed access to a replay protected memory block (RPMB); lock/unlock and write protection; password, permanent, power-on and temporary data protection mechanisms; sleep and awake modes; and power-off notification. Nothing outside that list is claimed for the device by this document.

Source and status of this document

The underlying document is “HIKSEMI Consumer eMMC5.1 HSEMSES2S2B16G DataSheet V1.3”, 22 pages. Its revision history has four rows: 1.0 (1 Jun 2019, Preliminary), 1.1 (5 Jan 2021, “Update OEM/Application ID”), 1.2 (20 Jul 2021, “Update some descriptions”) and 1.3 (10 Jun 2022, “Update some parameters”). The closing notice reads “Data subject to change without notice”; the copyright line says 2020 and the page footers point at en.hikstorage.com, the manufacturer’s legacy domain.

The manufacturer’s Chinese consumer eMMC product page lists this model among five in the family, so the part number itself is public. What is not public is the document: the manufacturer’s English consumer eMMC page offers datasheets for three other capacities only, and its download centre exposes no part-level entry we could retrieve. The copy behind this page reached us through the supply chain, so MemSignal neither links to it nor hosts it. The parameters above are the manufacturer’s stated values as printed in that preliminary document.

Not yet recorded

Lifecycle is left unset on purpose: the manufacturer’s document states none, and a distributor confirmation we hold for a different part in this family does not transfer to this one. No source states a country of origin, so that field stays empty rather than being inferred from the company’s registration address. Endurance figures are absent from the document and are therefore not published here. Cross-referenced alternatives are gated on this page as everywhere else on this site: a substitution row would change what somebody buys, so it needs a source, a date and a named reviewer first.

Cross-references & alternatives

No substitution list published for this part

A cross-reference here would change what a customer buys. We publish one only when each row carries a source and a date and has been checked by a named reviewer.

  • Table shape: Alternative · Fit · Differs in · Source · Checked
  • Blocked on: an engineering review step with a named reviewer per row

Official documentation

MemSignal does not host, reproduce or distribute datasheets. Where the manufacturer publishes one, we link to it.

Provenance

  • Source: HIKSEMI "Consumer eMMC5.1 HSEMSES2S2B16G DataSheet" V1.3, revision rows 1.0 (2019-06-01, Preliminary) to 1.3 (2022-06-10), received through the distribution channel (PDF md5 73609801d079501ec9d8473ad80b4212). The manufacturer's Chinese consumer eMMC product page lists this model; no manufacturer-hosted datasheet for it was found as of 2026-10-06, so no datasheet link is published. The 256 Gb × 1 NAND figure is the document's own; the contradiction with SEC_COUNT is MemSignal arithmetic.
  • Checked: 2026-10-06

Cross-reference and substitution advice appear only where each claim carries a source and a date.

Parameters not compiled for this part

  • Country of origin

Listed so the gap is visible on the page, not inferred later.

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