Compiled specifications
| Parameter | Value |
|---|---|
| Part number | EC100UFCH008ED |
| Density / capacity | 8 GB (user area printed as 7.28GB = 7.28 GiB; SEC_COUNT 0xE90000) |
| Speed / grade | eMMC 5.1, HS400/HS200, up to 400 MB/s (SDR/DDR, 1/4/8-bit) |
| Supply voltage | VCC 2.7-3.6 V; VCCQ 1.7-1.95 V or 2.7-3.6 V |
| Operating temperature | -25°C to +85°C (operating); -40°C to +85°C (storage) per manufacturer datasheet |
| Product line | EC100 Commercial eMMC 5.1 |
| Lifecycle | — |
Blank rows are omitted rather than filled with a guess.
What this part is
EC100UFCH008ED is the 8 GB member of UFLASH’s EC100 commercial eMMC 5.1 series: a managed NAND device with an embedded controller, compliant with the JEDEC eMMC 5.1 standard (JESD84-B51A), in a 153-ball FBGA measuring 11.5 × 13.0 × 1.0 mm.
Who makes it. UFLASH is the product mark of 紫光闪芯 (Shanxin), which its own company profile describes as the core storage enterprise of the New Unigroup group (新紫光集团); the mainland operating entity is 紫光闪芯科技(成都)有限公司, established February 2024, and the site’s own copyright line reads “紫光闪芯 版权所有” with a Sichuan ICP filing. The company added a Hong Kong entity in June 2024 — the site’s legal pages name UFLASH MEMORY TECHNOLOGY (HONG KONG) LIMITED as the site operator — and launched the overseas brand UMEMORY in November 2025. The EC100 embedded-eMMC line itself was announced at the CFMS | MemoryS summit in March 2026, five months before the document behind this page was cut.
The manufacturer’s own ordering table (§2 of the document behind this page) lists this part number, its capacity, its user-area size, package and shipping format, so the part number doubles as the ordering code. That is a manufacturer statement, not a distributor’s recollection.
Capacity as delivered
| Item | Value (8 GB) |
|---|---|
| Nominal capacity | 8 GB |
| User area (as printed) | 7.28 GB |
| SEC_COUNT in Extended CSD | 0xE90000 |
| Package | 153-ball FBGA, 11.5 × 13.0 × 1.0 mm |
| Shipping | Tray |
MemSignal recomputed the user area rather than trusting the label: SEC_COUNT 0xE90000 is 15,269,632 sectors of 512 bytes, which is 7,818,091,264 bytes — exactly 7.28 GiB. The document prints that as “7.28GB”; in binary units it is 7.28 GiB, or 7.82 GB in decimal units. The distinction matters when comparing usable space across vendors that label it the other way.
Where the manufacturer’s two public statements disagree
The datasheet behind this page states sequential read up to 270 MB/s and sequential write up to 230 MB/s. The manufacturer’s own EC100 product page states, for the 8 GB~16 GB capacity group, sequential read up to 320 MB/s and sequential write up to 260 MB/s. Both figures are on the record and we are not choosing between them.
Everything structural agrees between the two sources — eMMC 5.1 on JESD84-B51, HS400, an 8 GB~16 GB capacity group, FBGA-153 at 13 × 11.5 × 1.0 mm, operating -25°C to +85°C and storage -40°C to +85°C, VCC 2.7~3.6 V with VCCQ 1.7~1.95 V or 2.7~3.6 V. Only the speed figures differ, which is the usual signature of a product page describing the series’ best case and a datasheet describing one specific part. If a design depends on the throughput, treat 270/230 as the number the component document commits to and ask the manufacturer which applies to the silicon you are buying.
Performance figures as printed
| Metric | Value |
|---|---|
| Sequential read | 270 MB/s |
| Sequential write | 230 MB/s |
| Random read (4K) | 70 MB/s |
| Random write (4K) | 60 MB/s |
Note the unit: this document reports random 4K performance in MB/s, not IOPS. Converted at a 4 KiB block size, 70 MB/s is about 17,000 to 17,900 IOPS and 60 MB/s about 14,600 to 15,400 IOPS — the range is because the document does not say whether its “MB” is decimal (10⁶) or binary (2₀), and the two readings differ by 4.7%. Those are MemSignal conversions, not figures the manufacturer prints. The document also states that performance may vary with conditions and environment.
Interface
- Bus width 1-bit (default), 4-bit or 8-bit on a 12-signal interface (8 data lines, CLK, CMD, RST_n, DS).
- Speed modes HS400 and HS200; data transfer rate stated up to 400 MB/s; I/F clock 0 to 200 MHz, boot frequency 0 to 52 MHz.
- Protocol JEDEC eMMC 5.1 (JESD84-B51A); backward compatible.
- Package: 153-ball FBGA, 11.5 × 13.0 × 1.0 mm.
- Registers as printed: CID manufacturer ID 0x85, product name 1CH3H1, product revision 0x01.
Supply and power
VCC (NAND) is 2.7 to 3.6 V; VCCQ (controller and I/O) accepts 1.7 to 1.95 V or 2.7 to 3.6 V. Active current is 90 mA on VCC and 118 mA on VCCQ, measured at HS400 with VCC 3.3 V, VCCQ 1.8 V at room temperature. Standby draws 68 µA / 150 µA and sleep 0 µA / 150 µA, both on an 8-bit bus with the clock idle.
Temperature, and what the document does not claim
The manufacturer states an operating range of -25°C to +85°C and a storage range of -40°C to +85°C, and files the part as commercial grade. There is no qualification or certification statement of any kind in the document, no grade designation beyond the “Commercial” label on the cover, no endurance figure (P/E cycles or terabytes written), and no lifecycle or end-of-life position. The EC100 line does have an industrial variant on the manufacturer’s series page with a -40°C operating floor; that variant is a different part number and is not this one.
Source and status of this document
The underlying document is “UFLASH eMMC5.1 EC100 Series Datasheet — Commercial eMMC5.1 EC100UFCH008ED”, 26 pages, version history a single row: 1.0, Initial release, 2026.08. It carries the standard “subject to change without notice” caveat, and no public copy of it was found on the manufacturer’s website: the EC100 series page describes the line but exposes no part-level datasheet download. The copy behind this page reached us through the supply chain, so MemSignal neither links to it nor hosts it.
One provenance weakness is worth stating plainly. The file’s own metadata does not match its cover: the PDF title reads “Industrial eMMC Datasheet” and its subject field names a different part (FEMDRM016G-A3A56), while the cover says commercial EC100UFCH008ED. In addition, this document’s CID product name (1CH3H1) does not encode the ordering part number, so unlike some other vendors’ documents it cannot be self-checked against the part number it claims to describe. What we can verify is agreement on every structural field between this document and the manufacturer’s public EC100 series page — capacity group, interface, speed mode, package, dimensions and both temperature ranges.
Not yet recorded
The document does not state a NAND flash type for this part, so we do not publish one; the manufacturer’s series page lists NAND types per capacity column but the mapping to this specific ordering code is not something we can confirm from the documents. Country of origin, lifecycle position and endurance figures are likewise absent and stay empty. Cross-referenced alternatives are gated on this page as everywhere else on this site: a substitution row would change what somebody buys, so it needs a source, a date and a named reviewer first.
Cross-references & alternatives
A cross-reference here would change what a customer buys. We publish one only when each row carries a source and a date and has been checked by a named reviewer.
- Table shape: Alternative · Fit · Differs in · Source · Checked
- Blocked on: an engineering review step with a named reviewer per row
Official documentation
MemSignal does not host, reproduce or distribute datasheets. Where the manufacturer publishes one, we link to it.
Provenance
- Source: Primary: "UFLASH eMMC5.1 EC100UFCH008ED Datasheet" v1.0 (single revision row 1.0, Initial release 2026.08), received through the distribution channel (PDF md5 1bcd00e005c232b2222bde190f87a28a); no manufacturer-hosted copy of the document was found as of 2026-10-08, so no datasheet link is published. Cross-checked against the manufacturer's public EC100 series page https://www.unisflash.com/uflash/emmc/ which states 320/260 MB/s for the 8~16 GB group against this document's 270/230 — both published, neither resolved. Brand and corporate attribution from the manufacturer's own About page https://www.unisflash.com/about/ (紫光闪芯 as core storage enterprise of 新紫光集团; 紫光闪芯科技(成都)有限公司 est. 2024.2; EC100 line announced 2026.3; Sichuan ICP filing in the site copyright line).
- Checked: 2026-10-08
Cross-reference and substitution advice appear only where each claim carries a source and a date.
Parameters not compiled for this part
- Typical applications
- Country of origin
Listed so the gap is visible on the page, not inferred later.
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