MT53E512M64D2

The Micron MT53E512M64D2 is a 4 GB (32 Gb) mobile memory device: a 512 Meg x 64 array across 4 channels, built as a two-die (D2) stack in a 432-ball VFBGA package. The data sheet unifies LPDDR4X and LPDDR4 into one product.

Key figures

• Array configuration: 512 Meg x 64 (4 channels x 16 I/O).
• Device configuration: 512M32 x 2 die in package D2.
• Total density (Table 3, 512M64): 32Gb/package; 8Gb per channel.
• Speed grade: -046, 468ps @ RL = 36/40; data rate per pin: 4266 Mb/s.
• Bandwidth: up to 8.53 GB/s per die x16 channel.
• Supply: VDD1 1.80V, VDD2 1.10V, VDDQ 0.60V.
• Package: 432-ball VFBGA (package code NW), 15mm × 15mm, seated height 0.85mm MAX.
• Operating temperature range: -25°C to +85°C (WT) and -40°C to +95°C (IT).

Ordering codes on this page

Table 2 lists two ordering codes for this family — MT53E512M64D2NW-046 WT:B (design revision B, the second generation) and MT53E512M64D2NW-046 IT:B. Only the operating-temperature suffix differs (WT vs IT); both carry the same 4 GB (32 Gb) total density at the -046 grade.

Provenance

Every figure above is taken from Micron “432b: x64 Mobile LPDDR4X/LPDDR4 SDRAM” Datasheet Rev. C 06/2024 (332 pages, CCM005-554574167-10813) (cover feature list, the Part Number Chart and Table 2 Part Number List, and Table 3 Device Configuration). This document is Rev. C 06/2024. We link no public datasheet because our copy comes from the manufacturer’s login-gated archive and has not been byte-verified against a publicly hosted file; the document itself is marked “Micron Confidential and Proprietary”. No lifecycle (EOL / PCN) statement was verified against a manufacturer source for these codes, so lifecycle is left blank rather than asserted.

Who makes it

Micron is the brand of Micron Technology, Inc., which its own profile states began in 1978 in Boise, Idaho as a four-person semiconductor design company and is a world leader in memory.