MT40A512M16LY-062E

The Micron MT40A512M16LY-062E is an 8Gb DDR4 SDRAM x16, configured as 512 Meg x 16, on the -062E speed grade (DDR4-3200) at VDD = VDDQ = 1.2V. The AIT ordering suffix makes it an automotive-grade variant.

Key figures

• Array: 512 Meg x 16 (8Gb, x16).
• Speed: -062E = DDR4-3200, CL = 22, cycle time 0.625ns.
• Supply: VDD = VDDQ = 1.2V.
• Package: 96-ball FBGA, 7.5mm x 13.5mm (package code LY).
• Operating temperature: IT industrial range (carried by the classification above).

Grade & temperature note

The cover ordering-code decode is legible and shows an automotive-grade device (“Automotive grade” special option) on the IT operating band, and the standard IT band is reflected in the temperature classification above. This particular PDF copy renders the numeric operating-temperature table with a broken (CID-substituted) degree glyph, so we deliberately do not print the numeric range as a byte-traceable figure on this page; the range is carried only by the classification term and is tracked for confirmation against a manufacturer product page. The same data sheet documents an x8 sibling that is not this ordering code.

Lifecycle

The manufacturer’s product page lists this ordering code as obsolete (checked 2026-10-19); that status is reported from the product page and is not a value carried in the data sheet itself. No formal PCN/EOL document was available to cite here, so the lifecycle field is left blank rather than asserted, and the discontinuation is tracked for follow-up.

Provenance

The structural figures above are taken from Micron “8Gb: x8, x16 Automotive DDR4 SDRAM” 主文档 8gb-auto-ddr4-dram.pdf（一手排版链，AGG=NONE） (cover feature list, the Automotive DDR4 part-number decode and package table). The numeric operating-temperature range is intentionally not asserted here for the reason given above. We link no public datasheet: this copy is the manufacturer’s login-gated file and has not been byte-verified against a publicly hosted copy.

Who makes it

Micron is the brand of Micron Technology, Inc., which its own profile states began in 1978 in Boise, Idaho as a four-person semiconductor design company and is a world leader in memory.