MT40A2G8VA-062E

The Micron MT40A2G8VA-062E is a 16Gb DDR4 SDRAM x8, configured as 2 Gig x 8, on the -062E speed grade (DDR4-3200) at VDD = VDDQ = 1.2V, in the IT industrial temperature grade.

Key figures

• Array: 2 Gig x 8 (16Gb, x8).
• Speed: -062E = DDR4-3200, CL = 22, cycle time 0.625ns.
• Supply: VDD = VDDQ = 1.2V.
• Package: 78-ball FBGA (package code VA).
• Operating temperature: IT industrial range (carried by the classification above).

Temperature note

The cover ordering-code decode is legible and places this ordering code on the IT band, and the standard IT band is reflected in the temperature classification above. This particular PDF copy renders the numeric operating-temperature table with a broken (CID-substituted) degree glyph, so we deliberately do not print the numeric range as a byte-traceable figure on this page; the range is carried only by the classification term and is tracked for confirmation against a manufacturer product page. The same data sheet also documents x4 and x16 siblings that are not this ordering code.

Lifecycle

The manufacturer’s product page lists this ordering code as obsolete (checked 2026-10-19); that status is reported from the product page and is not a value carried in the data sheet itself. No formal PCN/EOL document was available to cite here, so the lifecycle field is left blank rather than asserted, and the discontinuation is tracked for follow-up.

Provenance

The structural figures above are taken from Micron “16Gb: x4, x8, x16 DDR4 SDRAM” 主文档 16gb-ddr4-sdram.pdf（一手排版链，AGG=NONE） (cover feature list, the DDR4 part-number decode and package table). The numeric operating-temperature range is intentionally not asserted here for the reason given above. We link no public datasheet: this copy is the manufacturer’s login-gated file and has not been byte-verified against a publicly hosted copy.

Who makes it

Micron is the brand of Micron Technology, Inc., which its own profile states began in 1978 in Boise, Idaho as a four-person semiconductor design company and is a world leader in memory.