MT41K256M16TW-107

The Micron MT41K256M16TW-107 is a 4Gb DDR3L SDRAM x16, configured as 256 Meg x 16 (32 Meg x 16 x 8 banks), on the -107 speed grade (DDR3-1866) at VDD = VDDQ = 1.35V.

Key figures

• Array: 256 Meg x 16, i.e. 32 Meg x 16 x 8 banks.
• Speed: -107 = DDR3-1866, CL = 13, cycle time 1.07ns.
• Supply: VDD = VDDQ = 1.35V (the cover gives the 1.283–1.45V window).
• Package: 96-ball FBGA, 8mm x 14mm, die/code Rev. P.

Temperature — the document prints two numbers

The cover and absolute-maximum table list the Commercial grade as 0°C to +95°C. The self-refresh conditions table (Table 18) separately gives a normal range of 0°C to +85°C and an extended range of 0°C to +95°C, where above +85°C the refresh must be derated (2× / SRT-ASR). We print both values the document states and flag where they diverge, rather than pick one number on the manufacturer’s behalf.

Lifecycle

No manufacturer EOL / PCN / lifecycle statement was verified against a first-hand source for this ordering code, so the lifecycle field is left blank rather than asserted.

Provenance

Every figure above is taken from Micron “4Gb: x4, x8, x16 DDR3L SDRAM” 主文档（doc-code 4Gb_DDR3L.pdf, Rev. R 09/18, 218 页；/Info=Antenna House/AH Formatter＝一手排版链，AGG=NONE） — cover ordering/part-numbering table (p1) and the density/speed table (p2) and self-refresh table (Table 18). We publish no datasheet hyperlink: this copy is the manufacturer’s login-gated file, has not been byte-verified against a publicly hosted copy, and the document footer carries the “reserves the right to change products or specifications without notice” line. This x16 code shares the document with the x4 and x8 density variants (the x8 sibling is published separately in this library).

Who makes it

Micron is the brand of Micron Technology, Inc., which its own profile states began in 1978 in Boise, Idaho as a four-person semiconductor design company and is a world leader in memory.