Compiled specifications
| Parameter | Value |
|---|---|
| Part number | MT40A1G16KNR-062E |
| Density / capacity | 16Gb (1 Gig x 16) |
| Speed / grade | -062E (DDR4-3200), CL = 22 |
| Supply voltage | VDD = VDDQ = 1.2V |
| Product line | DDR4 SDRAM (x16) |
| Lifecycle | — |
Blank rows are omitted rather than filled with a guess.
The Micron MT40A1G16KNR-062E is a 16Gb DDR4 SDRAM x16, configured as 1 Gig x 16 with 8 internal banks organised as 2 groups of 4 banks each, on the -062E speed grade (DDR4-3200) at VDD = VDDQ = 1.2V.
Key figures
- Array: 1 Gig x 16 (16Gb).
- Speed: -062E = DDR4-3200, CL = 22, cycle time 0.625ns; speed-bin CL-nRCD-nRP 22-22-22, tAA 13.75ns.
- Supply: VDD = VDDQ = 1.2V.
- Banks: 8 internal banks for the x16 — 2 groups of 4 banks each.
- Die revision: the ordering family lists :B, :E, :F; this code is the :E revision.
Package and temperature — deliberately not asserted
This copy of the document’s ordering/package table did not yield a clean, verifiable package-code mapping for the specific “KNR” suffix, and the cover does not print an unambiguous operating-temperature grade for this ordering code. Rather than guess, we leave the package and temperature fields blank on this page.
Lifecycle
No manufacturer EOL / PCN / lifecycle statement was verified against a first-hand source for this ordering code, so the lifecycle field is left blank rather than asserted.
Provenance
Every figure above is taken from Micron “16Gb: x4, x8, x16 DDR4 SDRAM” 主文档(doc 16gb_ddr4_dram.pdf, Rev. H 8/2021, 372 页;/Info=Antenna House/AH Formatter=一手排版链,AGG=NONE) — cover feature list and speed-bin table (p1). We publish no datasheet hyperlink: this copy is the manufacturer’s login-gated file, has not been byte-verified against a publicly hosted copy, and the document footer carries the “reserves the right to change products or specifications without notice” line. This x16 code shares the document with the x4 and x8 density variants (the x8 sibling is published separately in this library).
Who makes it
Micron is the brand of Micron Technology, Inc., which its own profile states began in 1978 in Boise, Idaho as a four-person semiconductor design company and is a world leader in memory.
Cross-references & alternatives
A cross-reference here would change what a customer buys. We publish one only when each row carries a source and a date and has been checked by a named reviewer.
- Table shape: Alternative · Fit · Differs in · Source · Checked
- Blocked on: an engineering review step with a named reviewer per row
Official documentation
MemSignal does not host, reproduce or distribute datasheets. Where the manufacturer publishes one, we link to it.
Provenance
- Source: Micron "16Gb: x4, x8, x16 DDR4 SDRAM" 主文档(doc 16gb_ddr4_dram.pdf, Rev. H 8/2021, 372 页;/Info=Antenna House/AH Formatter=一手排版链,AGG=NONE)
- Checked: 2026-10-20
Cross-reference and substitution advice appear only where each claim carries a source and a date.
Parameters not compiled for this part
- Operating temperature
- Typical applications
- Country of origin
Listed so the gap is visible on the page, not inferred later.
Related from our desk
- Anthropic IPO Filing Lifts Memory Stocks; Nomura Sees Shortage Lasting to 2028; SK hynix Weighs $12B Special Dividend Oct 27, 2026 · Market Analysis
- SK hynix DDR4 Dies: A Channel Buyer’s Guide to DJR, CJR and Downgraded Chips Oct 26, 2026 · Market Analysis
- YMTC NAND Shipments Seen Up 800% as China Memory Rises; Nvidia Denies RTX 5090 Exit Oct 24, 2026 · Market Analysis