Compiled specifications
| Parameter | Value |
|---|---|
| Part number | EC100UFCH016ED |
| Density / capacity | 16 GB (Table 1 prints a 14.56 GB user area; SEC_COUNT 0x1E00000 recomputes to 15.00 GiB) |
| Speed / grade | eMMC 5.1, HS400/HS200, up to 400 MB/s (1/4/8-bit) |
| Supply voltage | VCC 2.7-3.6 V; VCCQ 1.7-1.95 V or 2.7-3.6 V |
| Operating temperature | -25°C to +85°C (operating); -40°C to +85°C (storage) |
| Product line | EC100 Commercial eMMC 5.1 |
| Lifecycle | — |
Blank rows are omitted rather than filled with a guess.
EC100UFCH016ED is the 16 GB member of UFLASH’s EC100 eMMC 5.1 line, filed commercial on the cover and rated -25°C to +85°C, in a 153-ball FBGA measuring 11.5 x 13.0 x 1.0 mm.
Key figures
- Nominal capacity 16 GB; the ordering table prints the user area as 14.56 GB.
- SEC_COUNT in Extended CSD is 0x1E00000.
- Sequential read up to 280 MB/s, sequential write up to 240 MB/s.
- Random 4K read 80 MB/s, random 4K write 70 MB/s – printed in MB/s, not IOPS.
- Active current 95 mA on VCC and 120 mA on VCCQ; standby 70 uA on VCC and 160 uA on VCCQ; sleep 0 uA on VCC with 160 uA on VCCQ.
- Supply VCC 2.7~3.6 V, VCCQ 1.7~1.95 V or 2.7~3.6 V; HS400 and HS200; interface clock 0~200 MHz.
The document disagrees with itself on usable capacity
This is the one figure on this page we cannot reconcile, and we publish both readings rather than pick one. The ordering table says the user area is 14.56 GB. The Extended CSD table says SEC_COUNT is 0x1E00000. MemSignal recomputed the register: 0x1E00000 is 31,457,280 sectors of 512 bytes, which is 16,106,127,360 bytes – 15,360 MiB, exactly 15.00 GiB. The table figure read as binary is 14.56 GiB, so the two are 450 MiB apart, and no unit convention closes that gap.
The register value is also the odd one out within this series. The 8 GB document of the same line prints SEC_COUNT 0xE90000, which recomputes to 7.28 GiB against a user area of 7.28 GB, and the 64 GB document prints 0x7480000, which recomputes to 58.25 GiB against a user area of 58.24 GB. Those two agree with their own tables to within rounding; this one does not. Until the manufacturer says which is correct, size a partition from the register and budget storage from the table.
Where the document and the manufacturer’s series page disagree
The datasheet states sequential read up to 280 MB/s and sequential write up to 240 MB/s. The manufacturer’s EC100 series page states, for the 8 GB~16 GB capacity column of its Commercial table, sequential read up to 320 MB/s and sequential write up to 260 MB/s. Both figures are on the record and we are not choosing between them; the usual reading is a product page quoting the series best case and a part document quoting the part. Everything structural matches across the two sources – eMMC 5.1 on JESD84-B51, HS400, a 153-ball FBGA at 13 x 11.5 x 1.0 mm, operating -25°C to +85°C and storage -40°C to +85°C, VCC 2.7~3.6 V with VCCQ 1.7~1.95 V or 2.7~3.6 V.
Performance test conditions
The performance table was measured on an 8-bit bus in HS400 mode at 200 MHz DDR at room temperature, on a test board running Android 15, and the document notes performance may vary with conditions and environment. Note the unit again: random 4K results are printed in MB/s, so this page does not publish an IOPS figure for them.
Temperature, and what the document does not claim
The document states an operating range of -25°C to +85°C and a storage range of -40°C to +85°C. It carries no qualification or certification statement of any kind, no endurance figure (P/E cycles or terabytes written), no lifecycle position, and no NAND flash type for this part – the series page lists NAND types per capacity column, but mapping a column onto a specific ordering code is not something the documents let us confirm, so we do not publish one. The EC100 line has an industrial variant on the series page with a -40°C operating floor; that variant is a different part number and is not this one.
Source and status of this document
The underlying document is “UFLASH eMMC5.1 EC100 Series Datasheet – Commercial eMMC5.1 EC100UFCH016ED”, 26 pages, version history a single row: 1.0, Initial release, 2026.08. It reached us through the supply chain, and no manufacturer-hosted copy was found, so no datasheet link is published. Two provenance weaknesses are worth stating plainly. The file’s own metadata does not match its cover: the PDF title reads “Industrial eMMC Datasheet” and its subject field names a different part (FEMDRM016G-A3A56), while the cover says commercial EC100UFCH016ED. And the CID product name the document prints (1BH3H1, manufacturer ID 85h, revision 01h) does not encode the ordering part number, so the file cannot be self-checked against the part it claims to describe. What we can verify is agreement on every structural field between this document and the manufacturer’s EC100 series page.
Who makes it
UFLASH is the product mark of 紫光闪芯 (Shanxin), which its own company profile describes as the core storage enterprise of the New Unigroup group (新紫光集团); the mainland operating entity is 紫光闪芯科技(成都)有限公司, established February 2024. Its EC100 embedded-eMMC line is documented on the manufacturer’s own site, where it is offered in commercial and industrial temperature variants.
Cross-references & alternatives
A cross-reference here would change what a customer buys. We publish one only when each row carries a source and a date and has been checked by a named reviewer.
- Table shape: Alternative · Fit · Differs in · Source · Checked
- Blocked on: an engineering review step with a named reviewer per row
Official documentation
MemSignal does not host, reproduce or distribute datasheets. Where the manufacturer publishes one, we link to it.
Provenance
- Source: UFLASH eMMC5.1 EC100UFCH016ED Datasheet v1.0(渠道件 · 26 页 · md5 dd547b60c763cb51fde0b64e70caad94 · 版本史单行 1.0 Initial release 2026.08)
- Checked: 2026-10-11
Cross-reference and substitution advice appear only where each claim carries a source and a date.
Parameters not compiled for this part
- Typical applications
- Country of origin
Listed so the gap is visible on the page, not inferred later.
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