H5AN8G6NDJR-XNC

The H5AN8G6NDJR-XNC is an 8 Gb DDR4 SDRAM component from SK hynix, organized 512M x 16 (x16). It belongs to a single SK hynix component datasheet whose ordering table (section 1.2) lists the 8Gb family in three organizations (x4, x8 and x16) across seven speed-bin grades; the trailing two characters of the ordering code are the speed bin, and XN denotes the DDR4-3200 grade.

Key figures

• Density 8 Gb (document description line: “is a 8Gb CMOS Double Data Rate IV”).
• Organization 512M x 16 (x16 configuration in the ordering table).
• Speed grade XN = DDR4-3200, tCK 0.625 ns, CAS latency 22, CL-tRCD-tRP 22-22-22.
• Package 96ball FBGA for the x16 organization.
• Case-temperature range 0~95°C; the average refresh cycle halves to 3.9 µs between 85 and 95°C (7.8 µs from 0 to 85°C). Supply voltage VDD=VDDQ=1.2V.

Reading the grade

XN here is a speed bin, not a reliability or vehicle-grade claim. The datasheet carries no certification statement of that kind, and none is made here. The temperature figure is the case-temperature range printed with the refresh specification, and we publish it as a range without attaching a grade word the document does not use.

Ordering-code shape and spot listings

The datasheet prints this code as H5AN8G6NDJR-*xxC, where *xx is replaced by the speed-bin grade (XN = DDR4-3200 per section 1.2). A supplier-reported spot listing carrying the full code H5AN8G6NDJR-XNC is the same device at the DDR4-3200 bin.

Provenance

Every figure above is taken verbatim from SK hynix 8Gb DDR4 SDRAM component datasheet Rev1.4（46 页 · md5 defc3b28167fcd990134cdfb89ac032e · 封面 Rev1.4，订购表 §1.2 列出 4/8/6 三组织姊妹码）, from its section 1.2 Device Features and Ordering Information tables. Who makes it: SK hynix — the company describes itself on its own about page as having Started Semiconductor Business February 1983, headquartered in Icheon-si, Gyeonggi-do, Korea. The full source record with bytes, digest hashes and section anchors is kept in this site’s evidence register.