HSED4HB04G-JD3

HSED4HB04G-JD3 is a 4 Gb DDR4 SDRAM organised 256Mx16, ordered at the DDR4-2400 speed bin with 17-17-17 timings, in a 96-ball FBGA. It runs on a 1.2 V supply with a separate 2.5 V VPP for the DRAM activating power.

Key figures

• Density 4 Gb, organisation 256Mx16, 8 banks in two bank groups at x16.
• Ordered speed DDR4-2400 with CL-tRCD-tRP 17-17-17; the document lists bins from DDR4-1600 to DDR4-2666 (11-11-11 through 19-19-19).
• Supply VDD = VDDQ = 1.2 V +/- 0.06 V; VPP = 2.5 V over 2.375 V to 2.75 V.
• 8-bit pre-fetch, burst length 8 with burst chop 4, on-die termination, ZQ calibration, data-bus inversion at x8 and x16.
• Package 96-ball FBGA for the x16 organisation; the same document gives 78-ball FBGA for x4 and x8.
• Storage temperature range -55 to +100 °C.

What its temperature statement actually says

This is the part of the document most likely to be read wrongly, so it is set out in full. The ordering table files the part under a “Commercial Grade” heading, and §8.2 then gives two case-surface ranges rather than one: a Normal Operating Temperature Range of 0 to 85 °C, in which all DRAM specifications are supported, and an Extended Temperature Range of 85 to 95 °C which is also covered but only under additional conditions the document lists – among them that if self-refresh is needed in that band, manual self-refresh must be used. The refresh specification is stated the same way: an average refresh interval over a case range of 0 °C to 95 °C, at 7.8 microseconds from 0 °C to 85 °C and half that, 3.9 microseconds, from 85 °C to 95 °C.

We therefore file this part by the full envelope the document supports, 0 to 95 °C, and not by the grade word. Two things follow that a reader should not miss: the upper 10 degrees are conditional, and the document nowhere states a 0 to 70 °C limit – a “commercial” label is not a temperature figure, and we will not let one be read as one. Storage is specified separately at -55 to +100 °C.

What the document does not claim

No qualification or certification statement, no endurance figure, and no lifecycle position. The ordering table lists exactly one part number, so this page publishes one ordering code; the rest of the document describes x4, x8 and x16 behaviour generically, which is not the same as those organisations being orderable under this code.

Provenance

Figures are taken from HIKSEMI 4Gb DDR4 SDRAM HSED4HB04G-JD3 DataSheet（渠道件 · 85 页 · md5 8ccbc34ef6e292ccbfe09a34cac2d313 · 内文无修订史表，V1.0 只见于文件名）, received through the distribution channel. Our copy carries no revision-history table anywhere in its 85 pages, so the version number in the file name is the only place it appears and we publish no version claim from it. No manufacturer-hosted copy of this file was found, so the datasheet link is left blank rather than pointing at a same-family page.

Who makes it

HIKSEMI is the storage brand of 杭州海康存储科技有限公司 (Hangzhou HIKStorage Technology Co., Ltd.), founded in 2017 and built on the Hikvision group’s storage team. 杭州海康存储科技有限公司 成立于2017年，依托海康威视的技术积累（其团队 2015年：技术团队成立）。