HSEMSDS7S2B64G

What this part is

HSEMSDS7S2B64G is the 64 GB member of HIKSEMI’s consumer eMMC 5.1 family: 3D TLC NAND with an embedded thin-flash controller in a 153-ball FBGA measuring 11.5 × 13 × 1.0 mm. JEDEC/MMC standard version 5.1 compliant and backward compatible to eMMC v4.5 through v5.1. The manufacturer positions the family for embedded use in mobile phones, tablets, smart TVs, set-top boxes and networking appliances.

This is the one part in our index where we could compare two manufacturer documents for the same part number — the publicly published datasheet and a copy circulated through the distribution channel. They agree on every electrical and capacity figure we can check, and disagree on one structural claim. Both are recorded below rather than one being quietly preferred.

Who makes it. HIKSEMI is the storage brand of 杭州海康存储科技有限公司 (Hangzhou HIKStorage Technology Co., Ltd.). The company’s own profile states it was founded in 2017 and builds on the technology base of Hikvision (海康威视) in audio-video, imaging capture and data management, with its timeline putting the engineering team at 2015 and the registered company at 2017. The datasheet behind this page carries that same entity’s copyright line, so brand and document author are one party here.

Capacity map as delivered

MemSignal recomputed rather than transcribed: SEC_COUNT 0x7480000 is 122,159,104 sectors of 512 bytes, which is exactly 59,648 MB, and the enhanced-area row reproduces the manufacturer’s own formula (MAX_ENH_SIZE_MULT × HC_WP_GRP_SIZE × HC_ERASE_GRP_SIZE × 512 KB) to the megabyte. Pre-burned capacity is the data budget available before SMT.

Where the two documents disagree

The public datasheet’s product table states 3D TLC, 256 Gb × 2. The channel copy’s product table states 3D TLC, 512 Gb × 1. Both come to 512 Gb of raw NAND, which is why every capacity figure — the 59,648 MB user area, SEC_COUNT 0x7480000, the pre-burned budget — is identical in the two documents: none of those can tell a single 512 Gb die from a stack of two 256 Gb dies.

Everything else we compared is identical too. A cell-by-cell extraction of the performance, density, partition and power tables in both documents produced no numeric difference at all. So the disagreement is narrow and structural: how many NAND dies are in the package, which is exactly the kind of detail that matters for a 1.0 mm-thick stack, a reflow profile, or a supply substitution — and that we cannot resolve from the documents themselves.

MemSignal therefore publishes the NAND build as stated differently in two manufacturer documents rather than picking one. If a design depends on the die count — thin-stack mechanical work, or a qualification that cites a specific NAND generation — ask the manufacturer which is current, through your own contact.

Interface

• Bus width 1-bit (default), 4-bit or 8-bit; Single Data Rate and Dual Data Rate supported.
• Top timing mode HS400, clock 0 to 200 MHz.
• Protocol JEDEC/MMC standard version 5.1; backward compatible to eMMC v4.5 through v5.1.
• Package: 153-ball FBGA, 11.5 × 13 × 1.0 mm.
• Registers as printed in both documents: CID product name SDS7S2, product revision 0x10.

Supply and power

VCC (NAND/core) is 2.7 to 3.6 V, typical 3.3 V. VCCQ (controller/IO) accepts either 1.7 to 1.95 V (typical 1.8 V) or 2.7 to 3.6 V (typical 3.3 V) — one I/O rail or the other, not both at once.

Standby draws 10 µA on VCC and 75 µA on VCCQ; in sleep, VCC drops to 0 µA while VCCQ stays at 75 µA (both with an 8-bit bus and no clock, sleep entered by CMD5 with VCC switched off). Maximum RMS current is averaged over a 100 ms window and the manufacturer notes these figures are “not 100% tested”. As with the other consumer parts in this family, the timing mode used for Table 11 is not stated.

Performance figures

Sequential read up to 270 MB/s and write up to 210 MB/s; random read up to 4,000 IOPS and random write up to 2,800 IOPS, all at HS400. Both tables share one set of test conditions in these documents — a GL3227 card reader over USB 3.0 on a FAT32 volume, OS-less host, clean state — with no CrystalDiskMark version named. These are component-level vendor figures, not system benchmarks.

Temperature, and what the documents do not claim

The manufacturer states an operating temperature range of -25°C to +85°C and a storage temperature range of -40°C to +85°C; the storage range reaches lower on the cold side than the operating range, so -40°C is a handling figure, not a condition this device is specified to run at.

Neither document contains a qualification or certification statement of any kind, a grade designation, an endurance figure (P/E cycles or terabytes written), a reliability or RoHS/moisture-sensitive statement, or a lifecycle or end-of-life position. Anyone reading this page for an automotive or industrial design-in should treat those absences as real: this is a consumer-grade part.

Device features listed by the manufacturer

From the feature overview, identical in both documents: original and alternative boot modes; hardware reset signal; data removal commands (erase, trim, sanitize, discard); multiple partitioning; signed access to a replay protected memory block (RPMB); lock/unlock and write protection; password, permanent, power-on and temporary data protection mechanisms; sleep and awake modes; and power-off notification. Nothing outside that list is claimed for the device.

Source and status of these documents

Public document. “HIKSEMI 64GB eMMC5.1 HSEMSDS7S2B64G DataSheet V2.0”, 22 pages, offered for download from the manufacturer’s own consumer eMMC page. Its internal revision history has three rows — 1.0 (1 Jun 2019, Preliminary), 1.1 (5 Jan 2021, “Update OEM/Application ID”) and 1.2 (12 Aug 2022, “Update some descriptions”) — so the file is labelled V2.0 while its own table stops at 1.2. The PDF’s creation timestamp is 8 May 2024, with a later modification in 2025.

Channel document. “HIKSEMI Consumer eMMC5.1 HSEMSDS7S2B64G DataSheet V1.3”, 22 pages, received through the supply chain rather than from the manufacturer’s website. Its revision history has two rows — 1.0 (1 Jun 2019, Preliminary) and 1.1 (5 Jan 2021) — so it is labelled V1.3 while its own table stops at 1.1. Its creation timestamp is 14 July 2022.

Both carry the same closing notice, “Data subject to change without notice”, and neither is marked as a final production release. MemSignal links the public document and does not host or link the channel copy. The version-label mismatch in both files is worth knowing when you request a release from the manufacturer: the number in the file name is not a revision the document itself confirms.

Related on this site

Our page for HSEMSDY9S2B64G — the other 64 GB consumer part in this family, which the manufacturer does not list publicly — compares this device’s figures against that one die-for-die, including a ball-by-ball check of the two pin tables.

Not yet recorded

Lifecycle is left unset: neither document states one, and a distributor confirmation we hold for a different part in this family does not transfer to this one. No source states a country of origin, so that field stays empty rather than being inferred from the company’s registration address. Endurance figures are absent from both documents. Cross-referenced alternatives are gated on this page as everywhere else on this site: a substitution row would change what somebody buys, so it needs a source, a date and a named reviewer first.