MT41K256M16TW-107 AAT

Micron · DRAM · · -40~105°C

Compiled specifications

Compiled by the MemSignal team from publicly available information
ParameterValue
Part numberMT41K256M16TW-107 AAT
Density / capacity4Gb (256 Meg x 16)
Speed / grade-107 (DDR3-1866), CL = 13
Supply voltageVDD = VDDQ = 1.35V
Operating temperature-40°C to +105°C
Product lineDDR3L SDRAM (x16)
Lifecycle—

Blank rows are omitted rather than filled with a guess.

The Micron MT41K256M16TW-107 AAT is a 4Gb DDR3L SDRAM x16, configured as 256 Meg x 16 (32 Meg x 16 x 8 banks), on the -107 speed grade (DDR3-1866) at VDD = VDDQ = 1.35V, with an operating temperature range of −40°C to +105°C.

Key figures

  • Array: 256 Meg x 16, i.e. 32 Meg x 16 x 8 banks.
  • Speed: -107 = DDR3-1866, CL = 13, cycle time 1.07ns.
  • Supply: VDD = VDDQ = 1.35V.
  • Temperature range: −40°C to +105°C.
  • Package: 96-ball FBGA (TFBGA), 8mm x 14mm, die/code Rev. P.

Status

Micron’s DDR3L part catalog lists this ordering code (MT41K256M16TW-107 AAT:P) with a Part Status Code of Production.

Lifecycle

No manufacturer EOL / PCN lifecycle statement was verified against a first-hand source for this ordering code, so the lifecycle field is left blank rather than asserted.

Provenance

The identity of this ordering code, its −40°C to +105°C operating range, its TFBGA package and its Production status are taken from the Micron DDR3L part-catalog product page for MT41K256M16TW-107 AAT:P (Specifications block, captured 2026-10-20, which prints its range verbatim as “Operating Temp -40C to +105C”); the array organisation, -107 speed/CL, 1.35V and the 96-ball 8mm x 14mm Rev. P package are taken from the same-manufacturer “4Gb: x4, x8, x16 DDR3L SDRAM” main document (4Gb_DDR3L.pdf, Rev. R 09/18). We publish no datasheet hyperlink and we do not assert a certification grade here, because no first-hand qualification statement was verified against a source we can cite; the temperature range is reported exactly as the manufacturer’s product page states it.

Who makes it

Micron is the brand of Micron Technology, Inc., which its own profile states began in 1978 in Boise, Idaho as a four-person semiconductor design company and is a world leader in memory.

Cross-references & alternatives

No substitution list published for this part

A cross-reference here would change what a customer buys. We publish one only when each row carries a source and a date and has been checked by a named reviewer.

  • Table shape: Alternative · Fit · Differs in · Source · Checked
  • Blocked on: an engineering review step with a named reviewer per row

Official documentation

MemSignal does not host, reproduce or distribute datasheets. Where the manufacturer publishes one, we link to it.

Provenance

  • Source: Micron DDR3L part-catalog 产品页(本码 part-detail,Specifications 逐字存证,2026-10-20 现取)+ "4Gb: x4, x8, x16 DDR3L SDRAM" 主文档(doc-code 4Gb_DDR3L.pdf, Rev. R 09/18, 218 页;/Info=Antenna House/AH Formatter=一手排版链,AGG=NONE)
  • Checked: 2026-10-20

Cross-reference and substitution advice appear only where each claim carries a source and a date.

Parameters not compiled for this part

  • Typical applications
  • Country of origin

Listed so the gap is visible on the page, not inferred later.

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