
Samsung and SK hynix Reportedly Convert China NAND Lines to 286 and 240 Layers Under US Licence Rules

Samsung Electronics is converting its Xi’an plant to produce 286-layer V9 NAND under an internal project code-named Monami, targeting 5,000 wafers per month in December 2026 and 40,000 per month by December 2027, according to a Reuters report published on 21 October citing four people familiar with the plans. Reuters put Xi’an at about 40% of Samsung’s global NAND output and running near 200 layers today; TrendForce separately estimates China’s share of Samsung’s NAND output at 30% to 35%.
SK hynix is moving its Dalian fab from 192-layer production to 240 layers and above and is authorised up to 240 there, Reuters reported; the company may also seek US clearance to research 300-layer-and-above technology at the site. Dalian, acquired with Intel’s NAND business in 2021, is Solidigm’s only NAND fab.
Both must apply annually for US licences to install US-made equipment in their Chinese plants. The US Bureau of Industry and Security said in 2025 it did not intend to approve licences for technology upgrades or capacity expansion at foreign makers’ China plants; Reuters reported it could not determine how far current licences cover this work.
Samsung told Reuters the upgrade complies with US rules, serves global demand including in the United States, and neither expands capacity nor adds facilities. Both companies confirmed the upgrades are proceeding in close consultation with Washington. Reuters also cited Omdia data putting YMTC at a 38.5% share of China’s NAND market in Q2 2026, ahead of Samsung (33.5%) and SK hynix (17%).
Sources
- Reuters, October 21, 2026 — Samsung, SK Hynix upgrading China plants to make more advanced chips, people say (Hyunjoo Jin, Liam Mo, Karen Freifeld; cited via TrendForce) — https://www.trendforce.com/news/2026-10-21/news-samsung-sk-hynix-reportedly-push-china-nand-upgrades-beyond-200-layers-as-ymtc-competition-heats-up/
- SBS English, October 21, 2026 — Samsung and SK Hynix Push to Upgrade Advanced NAND Processes at China Plants — https://news.sbs.co.kr/english/article.do?news_id=N1008808616
- VLSI Korea, October 22, 2026 — Samsung and SK hynix Upgrade China NAND Fabs: 5 Facts Behind the 286-Layer and 240-Layer Moves — https://www.vlsi.kr/en/korea-china-nand-upgrade-ymtc-en/

